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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 18* i d @ v gs = 12v, t c = 100c continuous drain current 12 i dm pulsed drain current 72 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 80 mj i ar avalanche current 18 a e ar repetitive avalanche energy 7.5 mj dv/dt peak d iode recovery dv/dt 8.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10sec) weight 4.3(typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for spaceapplications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened JANSR2N7488T3 power mosfet 130v, n-channel thru-hole (to-257aa) ref: mil-prf-19500/705 www.irf.com 1 technology product summary part number radiation level r ds (on) i d qpl part number irhy57133cmse 100k rads (si) 0.09 ? 18a* JANSR2N7488T3 features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets light weight

t0-257aa irhy57133cmse pd - 94318c downloaded from: http:///
irhy57133cmse, JANSR2N7488T3 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 130 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.16 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.09 ? v gs = 12v, i d = 12a resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.5 s ( ) v ds > 15v, i ds = 12a i dss zero gate voltage drain current 10 v ds = 104v ,v gs =0v 25 v ds = 104v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 48 v gs =12v, i d = 18a q gs gate-to-source charge 16 nc v ds = 65v q gd gate-to-drain (miller) charge 18 t d (on) turn-on delay time 20 v dd = 65v, i d = 18a, t r rise time 70 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time 25 t f fall time 35 l s + l d total inductance 6.8 c iss input capacitance 965 v gs = 0v, v ds = 25v c oss output capacitance 300 pf f = 1.0mhz c rss reverse transfer capacitance 20 na ? nh ns a measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 18* i sm pulse source current (body diode) 72 v sd diode forward voltage 1.2 v t j = 25c, i s = 18a, v gs = 0v t rr reverse recovery time 200 ns t j = 25c, i f = 18a, di/dt 100a/ s q rr reverse recovery charge 1.5 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.67 r thja junction-to-ambient 80 c/w note: corresponding spice and saber models are available on international rectifier website.

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www.irf.com 3 irhy57133cmse, JANSR2N7488T3 table 1. electrical characteristics @ tj = 25c, post total dose irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 130 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 10 a v ds =104v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) 0.09 ? v gs = 12v, i d = 12a r ds(on) static drain-to-source v sd diode forward voltage 1.2 v v gs = 0v, i d = 18a on-state resistance (to-257aa) 0.09 ? v gs = 12v, i d = 12a ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 130 130 130 130 130 i 59.8 341 32.5 130 130 130 100 50 au 82.3 350 28.4 130 120 30 0 30 60 90 120 150 -20 -15 -10 -5 0 vgs vds br i au table 2. single event effect safe operating area downloaded from: http:///
irhy57133cmse, JANSR2N7488T3 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 18a 0.1 1 10 100 5 7 9 11 13 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j downloaded from: http:///
www.irf.com 5 irhy57133cmse, JANSR2N7488T3 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 18a v = 26v ds v = 65v ds v = 104v ds 0.2 0.6 1.0 1.4 1.8 2.2 v sd , source-todrain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 1 0ms operation in this area limited by r ds (on) 100s downloaded from: http:///
irhy57133cmse, JANSR2N7488T3 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms !
1 0.1 % " ! " #$%$$ v gs + - !

fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d limited by package downloaded from: http:///
www.irf.com 7 irhy57133cmse, JANSR2N7488T3 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current

fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs pre-irradiation 25 50 75 100 125 150 0 20 40 60 80 100 120 140 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8.0a 11.4a 18a downloaded from: http:///
irhy57133cmse, JANSR2N7488T3 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 104 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 0.5 mh peak i l = 18a, v gs = 12v i sd 18a, di/dt 280a/ s, v dd 130v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 06/2004 3.05 [.120] 0.13 [.005] 0.71 [.028] max. b 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1.14 [.045] 0.89 [.035] 16.89 [.665] 16.39 [.645] 321 15.88 [.625] 12.70 [.500] 0.88 [.035] 0.64 [.025] ? 0.50 [.020] c a b 2x 3x ? 2.54 [.100] c 10.66 [.420] 10.42 [.410] a 13.63 [.537] 13.39 [.527] 3x ? 3.81 [.150] 3.56 [.140] case outline and dimensions to-257aa not es : 1. dimens ioning & t olerancing per ans i y14.5m-1994. 2. cont roll ing dimens ion: inch. 3. dimens ions are s hown in mill imet ers [inches ]. 4. outline conforms to jedec outline to-257aa. 1 = drain legend 2 = source 3 = gate downloaded from: http:///

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